| 全部作者 | 黄至尧 |
|---|---|
| 论文名称 | A SCR-Buried BJT Device for Robust ESD Protection with High Latchup Immunity in High-Voltage Technology |
| 研讨会名称 | 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits |
| 举行地点 | ChinaSuzhou |
| 会议开始时间 | 2009-07-06 |
| 会议结束时间 | 2009-07-10 |
| 作者顺序 | 第一作者 |
